Structural, optical and magnetic properties of Ga1−xMnxN films grown by MOCVD
Structural, optical and magnetic properties of Ga1−xMnxN films grown by MOCVD
复制标题
DOI：
10.1088/0022-3727/41/24/245004
复制
发表时间：
2008-12
期刊：
影响因子：
--
通讯作者：
X. L. Yang;Z. Chen;L. B. Zhao;W. Zhu;C. D. Wang;X. Pei;G. Zhang
中科院分区：
文献类型：
--
作者：
X. L. Yang;Z. Chen;L. B. Zhao;W. Zhu;C. D. Wang;X. Pei;G. Zhang
本文研究了MOCVD生长的Ga1−xMnxN薄膜的结构、光学和磁性能。用x射线光电子能谱（XPS）测量分析了价带结构。随着氮化镓中Mn含量的增加，观察到不同的费米能级移位行为。这种转变行为归因于在重掺杂样品中Mn掺杂引起的供体样缺陷。钙致发光光谱进一步证实了这些缺陷的存在。重掺杂样品中2.0 eV左右的附加峰对应于Mn2+的d壳层内跃迁。这种Mn2+态是通过捕获从供体样缺陷释放的电子而形成的，这与XPS结果非常一致。最后，结合上述结果对其磁性能进行了讨论。
In this paper, we have investigated the structural, optical and magnetic properties of Ga1−xMnxN films grown by MOCVD. The valence band structure was analysed by the x-ray photoelectron spectroscopy (XPS) measurements. A different Fermi level shift behaviour was observed with increasing Mn composition in the GaN. This shift behaviour was attributed to the donor-like defects induced by the Mn doping in the heavily doped samples. The presence of these defects was further confirmed by the calthodoluminescence spectra. The additional peak around 2.0 eV in the heavily doped samples corresponds to the intra-d-shell transitions of Mn2+. This Mn2+ state was formed by trapping the electrons released from the donor-like defects, which is quite consistent with the XPS results. Finally, the magnetic properties were also discussed in combination with the above results.