Diode pumped diamond Raman microchip laser

Diode pumped diamond Raman microchip laser
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二极管泵浦金刚石拉曼微芯片激光器

DOI：
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发表时间：
2005
期刊：
CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005.
影响因子：
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通讯作者：
W. Kiefer
W. Kiefer
中科院分区：
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文献类型：
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作者：
A.A. Demiclovich;A. Grabtchikov;V. Orlovich;M. Danailov;W. Kiefer

文献摘要

被引文献

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在本报告中，首次演示了由激光二极管泵浦的脉冲金刚石拉曼微芯片激光器的操作。研究了不同腔参数和泵浦功率下拉曼激光器脉冲操作的激光特性。在斯托克斯波长下获得的最小脉冲持续时间短至 450 ps，峰值功率高达 1 kW。数值模拟的结果与实验数据非常吻合。
In this report, operation of pulsed diamond Raman microchip laser pumped by a laser diode is demonstrated for the first time. Laser characteristics of pulsed operation of Raman laser have been investigated at different cavity parameters and pump power. The minimum pulse duration obtained at the Stokes wavelength was as short as 450 ps with peak power up to 1 kW. Results of performed numerical modeling are in good agreement with experimental data.