Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode
Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode
复制标题
Al掺杂ITO透明导电电极增强GaN基395 nm倒装芯片发光二极管的光提取
DOI：
10.1364/ol.43.002684
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发表时间：
2018-06-01
期刊：
影响因子：
3.6
通讯作者：
Chen, Changqing
中科院分区：
文献类型：
--
作者：
Xu, Jin;Zhang, Wei;Chen, Changqing
铟锡氧化物（ITO）对紫外光的强烈吸收限制了GaN基近紫外发光二极管（LED）的性能。在此，我们报道了一种具有增强的紫外透射率和低方块电阻的Al掺杂ITO作为GaN基395 nm倒装芯片近紫外LED的透明导电电极。研究了Al掺杂ITO薄膜的光学和电学性能与厚度的关系。最佳Al掺杂的ITO薄膜在395 nm处的透射率为93.2%，平均方块电阻为30.1 O/sq。同时，在300 mA的注入电流下，掺铝ITO的395 nm近紫外倒装LED的正向电压从3.14 V降低到3.11 V，光输出功率比纯ITO的提高了13%。这封信提供了一种简单且可重复的方法，以进一步提高GaN基近紫外LED的光提取效率。(C)2018美国光学学会
The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1 O/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs. (C) 2018 Optical Society of America