Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures
Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures
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IIa族氟化物/Si(111)异质结构中的外延关系
DOI：
10.1063/1.93988
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发表时间：
1983
影响因子：
4
通讯作者：
H. Ishiwara
中科院分区：
文献类型：
--
作者：
T. Asano;H. Ishiwara
用真空蒸发法在Si（111）衬底上外延生长了CaF_2、SrF_2、BaF_2和（Ca，Sr）F_2混合薄膜。用离子沟道分析研究了这些氟化物薄膜与衬底的外延关系。CaF 2和SrF 2膜都优选具有关于衬底表面的法线旋转180°的取向。相反，绝大多数（Ca，Sr）F2膜具有与衬底相同的取向，BaF 2膜由两者的混合物组成。对Si/CaF_2/Si（111）双异质结构也进行了分析，结果表明，顶部Si膜又绕着下面CaF_2表面的法线旋转了180°。
CaF2, SrF2, BaF2, and mixed (Ca,Sr)F2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF2 and SrF2 films prefer to have orientations rotated 180° about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180° about the normal to the underlying CaF2 surface.