Ambient-controlled scanning spreading resistance microscopy measurement and modeling
Ambient-controlled scanning spreading resistance microscopy measurement and modeling
复制标题
环境控制扫描扩散电阻显微镜测量和建模
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
A. Mcteer
中科院分区：
文献类型：
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作者：
S. Qin;Z. Suo;D. Fillmore;Shifeng Lu;Y. J. Hu;A. Mcteer
一种环境控制的扫描扩展电阻显微镜（AC-SSRM）装置被用于一维（1D）和二维掺杂分布测量。在毯覆（垂直）B掺杂的Si晶片上进行1D SSRM分布以获得扩展电阻分布SR（x）。建模用于将SR（x）转换为载波分布n（x）。用使用μ（x）的校准代替平均迁移率（μ），载流子（空穴）分布n（x）更精确。这在表面和结深度（xj）附近尤其明显，并且与连续阳极氧化技术/微分霍尔效应（CAOT/DHE）测量的载流子分布一致。基于AC-SSRM数据的模型得到xj = 103.4 nm，这与二次离子质谱结果xj = 104.0 nm一致。使用μ（x）校准的空穴剂量为9.6 × 1014/cm 2，相对更接近DHE空穴剂量1.4 × 1015/cm 2。此外，四探针法、CAOT/DHE法和四探针法测定的薄层电阻（RS）值具有较好的一致性。
An ambient-controlled scanning spreading resistance microscopy (AC-SSRM) apparatus is utilized for one-dimensional (1D) and two-dimensional doping profiling measurement. 1D SSRM profiling on a blanket (vertical) B-doped Si wafer is conducted to obtain a spreading resistance profile SR(x). Modeling is used to convert SR(x) to carrier profile n(x). Replacing the average mobility (μ) with a calibration using μ(x), the carrier (hole) profile n(x) is more accurate. This is especially pronounced near the surface and junction depth (xj) and is consistent with the continuous anodic oxidation technique/differential Hall effect (CAOT/DHE) measured carrier profiles. The model based on AC-SSRM data obtained xj = 103.4 nm, which was consistent to secondary ion mass spectrometry results of xj = 104.0 nm. Calibrated hole dose using μ(x) is 9.6 × 1014/cm2 and is relatively closer to DHE hole dose 1.4 × 1015/cm2. In addition, a fairly good consistency of sheet resistance (RS) values among 4 point probe (4PP), CAOT/DHE, an...