An extended defect in graphene as a metallic wire
An extended defect in graphene as a metallic wire
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DOI：
10.1038/nnano.2010.53
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发表时间：
2010-05-01
影响因子：
38.3
通讯作者：
Batzill, Matthias
中科院分区：
文献类型：
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作者：
Lahiri, Jayeeta;Lin, You;Batzill, Matthias
石墨烯的许多应用都需要在纳米尺度上调整其电子结构的能力（1,2）。虽然电荷转移(3)和场效应掺杂(4)可以用于控制载流子浓度，但使用它们来实现纳米级控制仍然是一个挑战。另一种方法是“自掺杂”(5)，在石墨烯晶格中引入扩展缺陷。这些缺陷的控制工程代表了一种可行的方法来创建和纳米级控制具有几个原子宽度的一维电荷分布(6)。然而，到目前为止，唯一通过实验发现的扩展缺陷是石墨烯纳米带的边缘（7-10），其显示的悬垂键使其化学不稳定（11-13）。在这里，我们报道了在石墨烯中实现的一维拓扑缺陷，包含八角形和五角形sp(2)杂化碳环嵌入在完美的石墨烯片中。通过掺杂周围的石墨烯晶格，缺陷充当准一维金属线。这样的导线可能会成为原子尺度的全碳电子元件的基石。
Many proposed applications of graphene require the ability to tune its electronic structure at the nanoscale(1,2). Although charge transfer(3) and field-effect doping(4) can be applied to manipulate charge carrier concentrations, using them to achieve nanoscale control remains a challenge. An alternative approach is 'self-doping'(5), in which extended defects are introduced into the graphene lattice. The controlled engineering of these defects represents a viable approach to creation and nanoscale control of one-dimensional charge distributions with widths of several atoms(6). However, the only experimentally realized extended defects so far have been the edges of graphene nanoribbons(7-10), which show dangling bonds that make them chemically unstable(11-13). Here, we report the realization of a one-dimensional topological defect in graphene, containing octagonal and pentagonal sp(2)-hybridized carbon rings embedded in a perfect graphene sheet. By doping the surrounding graphene lattice, the defect acts as a quasi-one-dimensional metallic wire. Such wires may form building blocks for atomic-scale, all-carbon electronics.