Band gap reduction in InAsN alloy
Band gap reduction in InAsN alloy
复制标题
InAsN 合金中带隙的减小
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
D. Shih
中科院分区：
文献类型：
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作者：
T. Chu;Hao;D. Shih
报道了气态源分子束外延生长的InAsN合金的吸收和光致发光特性。根据能带反腐蚀模型计算了由于合金中高的残余载流子密度和原始带隙能而产生的Burstein-Moss效应和能带重整化效应。从我们的计算可以看出，光致发光光谱的宽线宽是由于Burstein-Moss效应，并且这些光谱的高能边与吸收测量的结果是一致的。荧光光谱的低能边也接近于计算的原始带隙能量。
We report the absorption and photoluminescence (PL) properties of InAsN alloys grown by gas source molecular beam epitaxy. A calculation based on the band anticrossing model was used to evaluate the Burstein-Moss effect and the band renormalization effect due to the high residual carrier density in the alloy and also the original band gap energy. It can be seen from our calculation that the broad linewidths of the PL spectra are due to the Burstein-Moss effect, and the high-energy edges of these spectra are consistent with the results from absorption measurements. The low-energy edges of PL spectra are also shown to be close to the calculated original band gap energy.