Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning
Extreme ultraviolet mask substrate surface roughness effects on lithographic patterning
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DOI：
10.1116/1.3502436
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发表时间：
2010-11-01
影响因子：
1.4
通讯作者：
Anderson, Erik H.
中科院分区：
文献类型：
--
作者：
George, Simi A.;Naulleau, Patrick P.;Anderson, Erik H.
在极紫外光刻曝光系统中，掩模基板粗糙度引起的散射会导致图像平面处的线边缘粗糙度（LER）。在本文中，明确评估了掩模基板粗糙度对图像平面散斑的影响。使用编程的粗糙度掩模来研究掩模粗糙度度量与晶圆平面航空图像检查之间的相关性。作者发现，通过顶部表面形貌轮廓进行的粗糙度测量并不能提供有关导致图像平面上的 LER 的散射相关散斑的完整信息。他们建议通过成像和/或散射测量到不同频率来进行波长表征，作为对掩模基板/多层粗糙度效应进行更全面计量的替代方法。 (C) 2010 年美国真空协会。 [DOI:10.1116/1.3502436]
In extreme ultraviolet lithography exposure systems, mask substrate roughness-induced scatter contributes to line edge roughness (LER) at the image plane. In this article, the impact of mask substrate roughness on image plane speckle is explicitly evaluated. A programed roughness mask was used to study the correlation between mask roughness metrics and wafer plane aerial image inspection. The authors find that the roughness measurements by the top surface topography profile do not provide complete information on the scatter related speckle that leads to LER at the image plane. They suggest at-wavelength characterization by imaging and/or scatter measurements into different frequencies as an alternative for a more comprehensive metrology of the mask substrate/multilayer roughness effects. (C) 2010 American Vacuum Society. [DOI:10.1116/1.3502436]