Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes
Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes
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DOI：
10.1063/1.4971190
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发表时间：
2016-12
影响因子：
4
通讯作者：
Y. Azuma;M. Sakamoto;T. Teranishi;Y. Majima
中科院分区：
文献类型：
--
作者：
Y. Azuma;M. Sakamoto;T. Teranishi;Y. Majima
浮栅存储器的操作证明在单电子晶体管（SET）的化学组装使用Au纳米间隙电极和化学吸附的Au纳米粒子制造。通过对控制栅施加脉冲电压，在库仑振荡和库仑金刚石中都清楚而稳定地观察到相移。可重复地观察浮栅存储器上的写入和擦除操作，并且浮栅电极上的电荷保持至少12小时。通过考虑浮置栅电极的电容，浮置栅电极中的电子数被估计为260。由于所制造的SET的稳定性，在浮栅存储器上的这些写入和擦除操作可以应用于通过化学组装技术制造的可重构SET电路。
Floating gate memory operations are demonstrated in a single-electron transistor (SET) fabricated by a chemical assembly using the Au nanogap electrodes and the chemisorbed Au nanoparticles. By applying pulse voltages to the control gate, phase shifts were clearly and stably observed both in the Coulomb oscillations and in the Coulomb diamonds. Writing and erasing operations on the floating gate memory were reproducibly observed, and the charges on the floating gate electrodes were maintained for at least 12 h. By considering the capacitance of the floating gate electrode, the number of electrons in the floating gate electrode was estimated as 260. Owing to the stability of the fabricated SET, these writing and erasing operations on the floating gate memory can be applied to reconfigurable SET circuits fabricated by a chemically assembled technique.