Electrical transport of tetragonal boron nanobelts
Electrical transport of tetragonal boron nanobelts
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DOI：
10.1116/1.2131870
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发表时间：
2005-11
影响因子：
1.4
通讯作者：
K. Kirihara;Z. Wang;Kenji Kawaguchi;Y. Shimizu;T. Sasaki;N. Koshizaki;H. Hyodo;K. Soga;K. Kimura
中科院分区：
文献类型：
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作者：
K. Kirihara;Z. Wang;Kenji Kawaguchi;Y. Shimizu;T. Sasaki;N. Koshizaki;H. Hyodo;K. Soga;K. Kimura
我们测量了具有α-四方晶体结构的单晶硼纳米带的电导率。采用气相扩散法进行了Mg的掺杂实验。我们通过 Ni∕Au 双层金属电极获得了纯纳米带和镁掺杂纳米带的欧姆接触。从电导的温度依赖性来看，我们发现纯硼纳米带是半导体。纯硼纳米带的电导率在室温下估计为 10−3(Ωcm)−1 量级。 Mg蒸气扩散后，电导率增加了100倍，但没有观察到向金属的转变。
We measured electrical conductances in single crystalline boron nanobelts having α-tetragonal crystalline structure. The doping experiment of Mg was carried out by vapor diffusion method. We obtained ohmic contacts to both pure and Mg-doped nanobelt by metal electrodes of Ni∕Au bilayer. From the temperature dependence of electrical conductance, we found that the pure boron nanobelt is a semiconductor. The electrical conductivity of pure boron nanobelt was estimated to be on the order of 10−3(Ωcm)−1 at room temperature. After Mg vapor diffusion, the electrical conductance increased by a factor of 100 but a transition to metal was not observed.