Volume swelling of amorphous SiC during ion-beam irradiation
Volume swelling of amorphous SiC during ion-beam irradiation
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DOI：
10.1103/physrevb.72.024116
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发表时间：
2005-07-01
影响因子：
3.7
通讯作者：
Sickafus, KE
中科院分区：
文献类型：
--
作者：
Ishimaru, M;Bae, IT;Sickafus, KE
用能量过滤透射电子显微镜结合成像板技术研究了非晶态碳化硅在辐射环境下的化学短程有序性与体积膨胀的关系。在低温(120K)和高温(373K)条件下，用300keV的氙离子对(0001)取向的4H-SiC单晶进行了能量密度为10(15)cm(-2)的辐照。两种样品都形成了连续的非晶层，但体积变化的大小不同：随着辐照温度的降低，体积膨胀变得更加明显。从径向分布函数分析发现，随着化学无序化的进行，Si-Si原子对的数量比C-C原子对的数量增加得更快。根据我们的结果和以前的观察结果，我们讨论了离子束在无定形碳化硅中引起的膨胀。
Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H-SiC with (0001) orientation were irradiated with 300 keV xenon ions to a fluence of 10(15) cm(-2) at cryogenic (120 K) and elevated (373 K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si-Si atomic pairs increases more rapidly than that of C-C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.