Crystal-induced transverse current in collinear antiferromagnetic γ-FeMn
Crystal-induced transverse current in collinear antiferromagnetic γ-FeMn
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DOI：
10.1063/5.0069504
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发表时间：
2021-04
影响因子：
4
通讯作者：
Lei Wang;K. Shen;S. Tsirkin;T. Min;K. Xia
中科院分区：
文献类型：
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作者：
Lei Wang;K. Shen;S. Tsirkin;T. Min;K. Xia
自发霍尔效应通常由Berry曲率、斜散射和侧跳等三种传统机制控制，它们广泛存在于铁磁或反铁磁材料中。然而，在这项工作中，基于第一性原理计算，我们预测了反铁磁γ-FeMn中的巨晶霍尔效应(CHE)，这是前三种常规机制所不能理解的，并且在低温下霍尔角可以达到18.4%。此外，根据玻尔兹曼输运方程和紧束缚模型，我们得出结论，费米面上的不对称群速度是γ-FeMn中CHE的起源。通过系统的对称性论证，我们表明，这种不寻常的效应不依赖于特定的材料，而是在任何具有相似对称性的晶体中普遍存在，即使没有局域磁化。
The spontaneous Hall effect is usually governed by three conventional mechanisms, such as the Berry curvature, skew scattering and side jump, which widely exist in ferromagnetic or antiferromagnetic materials. However, in this work, based on first principle calculations, we predict a giant crystal Hall effect (CHE) in the antiferromagnetic $\gamma$-FeMn, which can not be understood by the previous three conventional mechanisms and the Hall angle therein can be as large as 18.4% at low temperature. Furthermore, with Boltzmann transport equation and a tight-binding model, we conclude that, the asymmetric group velocities on Fermi surface is the origin of this CHE in $\gamma$-FeMn. And with a systematic symmetry argument, we show that, this unusual effect is not dependent on specific materials but universal in any crystals with similar symmetry even without local magnetization.