Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method
Analysis of Dopant Concentration in Semiconductor Using Secondary Electron Method
复制标题
二次电子法分析半导体中的掺杂剂浓度
DOI：
10.1143/jjap.42.l709
复制
发表时间：
2003
影响因子：
1.5
通讯作者：
M. Inoue
中科院分区：
文献类型：
--
作者：
Yuzuru Mizuhara;J. Kato;T. Nagatomi;Y. Takai;M. Inoue
研究了p型Si的掺杂浓度与从二次电子（SE）谱的开始获得的功函数之间的相关性。为了精确地测量SE光谱的起始点的微小差异，校正了由于施加到样品的偏置电压引起的静电场失真的影响。目前的研究结果表明，由SE方法的功函数的测量是适用于溅射深度剖析的掺杂剂浓度在半导体器件中，使用俄歇电子能谱系统。
Correlation between the dopant concentration of p-type Si and the work function obtained from the onset of the secondary electron (SE) spectrum was investigated. To measure the slight difference of the onset of the SE spectrum precisely, effects of the distortion of the electrostatic field due to the bias voltage applied to the sample were corrected. The present results have revealed that the measurement of the work function by the SE method is applicable to sputter depth profiling of the dopant concentration in semiconductor devices, using the Auger electron spectroscopy system.