InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium
InGaP/GaAs/Ge multi-junction solar cell efficiency improvements using epitaxial germanium
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DOI：
10.1109/pvsc.2000.916053
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发表时间：
2000-10
期刊：
影响因子：
--
通讯作者：
D. Aiken
中科院分区：
文献类型：
--
作者：
D. Aiken
三结InGaP/GaAs/Ge太阳能电池由于锗子电池的过量电流产生能力而具有高度电流失配。这种严重的电流不匹配要求新的方法来提高性能，超越目前的三重结。这里提出了两种用于提高III-V多结的效率超过当前三结技术的效率的方法。这两种方法都涉及薄外延锗的使用，并且不需要开发新的/spl sim/1 eV光伏材料。理论AM 0效率超过30%。建模表明，相对于当前InGaP/GaAs/Ge三结太阳能电池，绝对效率增益超过1.5%的潜力。
Triple junction InGaP/GaAs/Ge solar cells are highly current mismatched due to the excess current generating capability of the germanium subcell. This severe current mismatch invites new approaches for increasing performance beyond that of current triple junctions. Presented here are two approaches for improving the efficiency of Ill-V multi-junctions beyond that of current triple junction technology. Both of these approaches involve the use of thin epitaxial germanium and do not require the development of new /spl sim/1 eV photovoltaic materials. The theoretical AM0 efficiency is over 30%. Modeling suggests the potential for over 1.5% absolute efficiency gain with respect to current InGaP/GaAs/Ge triple junction solar cells.