Double-exchange-like interaction in Ga1-xMnxAs investigated by infrared absorption spectroscopy -: art. no. 193312
Double-exchange-like interaction in Ga1-xMnxAs investigated by infrared absorption spectroscopy -: art. no. 193312
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DOI：
10.1103/physrevb.65.193312
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发表时间：
2002-05-15
影响因子：
3.7
通讯作者：
Iye, Y
中科院分区：
文献类型：
--
作者：
Hirakawa, K;Katsumoto, S;Iye, Y
我们研究了铁磁p型Ga_（1-x）Mn_xAs的红外光吸收α（ω）。观察到的α（ω）显示出非常非德鲁德特征，表明孔几乎是局部的混乱。此外，还观察到了带间和带内跃迁之间随温度变化的光谱转移，这有力地表明了类双交换机制在III-V族稀磁半导体的铁磁有序化过程中起着重要作用.电阻扭结附近的T-c（通常归因于“临界散射”）的起源也进行了讨论。
We have investigated the infrared optical absorption alpha(omega) of ferromagnetic p-type Ga1-xMnxAs. The observed alpha(omega) showed very non-Drude characteristics, indicating that the holes are nearly localized by disorder. Furthermore, a temperature-dependent spectral transfer between interband and intraband transitions is observed, which strongly suggests that the double-exchange-like mechanism is playing an important role in the ferromagnetic ordering process in III-V diluted magnetic semiconductors. The origin of resistance kinks near T-c (often attributed to "critical scattering") is also discussed.