Thickness dependence of oxide breakdown under high field and current stress
Thickness dependence of oxide breakdown under high field and current stress
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DOI：
10.1063/1.97867
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发表时间：
1987-01
影响因子：
4
通讯作者：
M. Liang;J. Choi
中科院分区：
文献类型：
--
作者：
M. Liang;J. Choi
栅极氧化物的完整性是氧化物厚度、外加电场和电流强度的重要函数。薄栅极氧化物在低电场和电流应力下具有较长的寿命。然而，高场和电流诱导的本征击穿与氧化物厚度成反比。研究还发现，多晶硅和二氧化硅界面粗糙度对氧化物电荷击穿的影响与氧化物厚度、应力场和电流水平无关。采用正电荷产生和复合的模型来解释实验数据。
The integrity of gate oxides is shown to be a strong function of both oxide thickness and applied field and current strength. Thin gate oxides show longer lifetime under low field and current stress. However, high field and current induced intrinsic breakdown is inversely proportional to oxide thickness. It is also found that the effect of polycrystalline silicon and silicon dioxide interface roughness on oxide charge‐to‐breakdown is independent of oxide thickness and stressing field and current level. A model of positive charge generation and recombination is applied to explain the experimental data.