Carrier envelope offset detection via simultaneous supercontinuum and second-harmonic generation in a silicon nitride waveguide
Carrier envelope offset detection via simultaneous supercontinuum and second-harmonic generation in a silicon nitride waveguide
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DOI：
10.1364/ol.43.004627
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发表时间：
2018-10-01
期刊：
影响因子：
3.6
通讯作者：
Gaeta, Alexander L.
中科院分区：
文献类型：
--
作者：
Okawachi, Yoshitomo;Yu, Mengjie;Gaeta, Alexander L.
我们演示了用于载体 - 内螺旋 - 偏置频率（F（CEO））检测的芯片尺度F-2F干涉仪。这是通过同时产生单个分散工程氮化硅波导中的八度跨跨跨跨副局部生成和第二谐波生成的能力来启用的。我们测量了80 MHz模型泵源的F（CEO）beatnote，信噪比为25 dB。我们对F-2F干涉测量法的简单方法使通往芯片尺度的自我引用频率梳子源可以直接途径，该频率梳子源可以在低脉冲能量下运行。 （c）2018美国光学学会
We demonstrate a chip-scale f - 2f interferometer for carrier-envelope-offset frequency (f(CEO)) detection. This is enabled by simultaneously producing octave-spanning coherent supercontinuum generation and second-harmonic generation in a single dispersion-engineered silicon nitride waveguide. We measure the f(CEO) beatnote of an 80 MHz modelocked pump source with a signal-to-noise ratio of 25 dB. Our simple approach for f - 2f interferometry enables a straightforward route towards a chip-scale self-referenced frequency comb source that can operate at low pulse energies. (C) 2018 Optical Society of America