High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets
High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets
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基于二维ZnO纳米片的高性能顶栅铁电场效应晶体管
DOI：
10.1063/1.4975061
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发表时间：
2017-01-23
影响因子：
4
通讯作者：
Hu, Weida
中科院分区：
文献类型：
--
作者：
Tian, Hongzheng;Wang, Xudong;Hu, Weida
制备了高质量的超薄二维氧化锌纳米片(NSS)，并以P(VDF-TrFE)聚合物薄膜为顶栅绝缘层，制备了氧化锌纳米铁电场效应晶体管(FeFET)。由于其高的结晶质量和超薄的二维结构，使其具有588.9 cm(2)/vs的最大场效应迁移率和2.5mU的S跨导。研究了P(VDF-TrFE)薄膜的偏振特性，得到P(VDF-TrFE)膜厚度为300 nm时的剩余偏振度为>；100mC/cm(2)。由于在P(VdF-TrFE)薄膜中产生了超高的剩余极化场，在零栅电压和0.1V的源漏偏压下，FeFET显示出16.9V的大存储窗口和大于107的源漏通断电流比，并且获得了>；3000 S的极化保持时间，这为具有非易失性的数据存储提供了一种新的应用前景。由AIP出版公司出版。
High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm(2)/Vs and a large transconductance of 2.5 mu S due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 mu C/cm(2) is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9V and a high source-drain on/off current ratio of more than 10 7 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features. Published by AIP Publishing.