New Developments in SiGe HBT Reliability for RF Through mmW Circuits
New Developments in SiGe HBT Reliability for RF Through mmW Circuits
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通过毫米波电路实现射频的 SiGe HBT 可靠性的新发展
DOI：
10.1109/irps46558.2021.9405171
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
J. Cressler
中科院分区：
文献类型：
--
作者：
J. Cressler
本文回顾了我们对 SiGe HBT 及其构建的电路的可靠性理解的当前进展，包括：1）对多种操作损伤机制的基本理解，2）直流和射频可靠性之间的差异，3）预测可靠性感知紧凑模型的路径，以及 4）电路安全操作区（C-SOA）的概念，它为理解对电路和系统的可靠性施加的约束提供了更好的基准。
This paper reviews current progress in our understanding of the reliability of SiGe HBTs and the circuits built from them, including: 1) fundamental understanding of the multiple operative damage mechanisms, 2) the differences between DC and RF reliability, 3) the path to predictive reliability-aware compact models, and 4) the concept of Circuit-Safe Operating Area (C-SOA), which offers a better benchmark for understanding reliability-imposed constraints on circuits and systems.