High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
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DOI：
10.1063/1.5138127
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发表时间：
2020-02
影响因子：
4
通讯作者：
P. Reddy;M. Hayden Breckenridge;Q. Guo;A. Klump;D. Khachariya;S. Pavlidis;W. Mecouch;S. Mita;B. Moody;J. Tweedie;R. Kirste;E. Kohn;R. Collazo;Z. Sitar
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文献类型：
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作者：
P. Reddy;M. Hayden Breckenridge;Q. Guo;A. Klump;D. Khachariya;S. Pavlidis;W. Mecouch;S. Mita;B. Moody;J. Tweedie;R. Kirste;E. Kohn;R. Collazo;Z. Sitar
我们展示了在单晶AlN衬底上生长的大面积(25000μm2)富Al雪崩光电二极管(APD)在90pW(280 Nm)处的信号增益为10万，建立了器件的太阳盲区。我们展示了在单晶AlN衬底上生长的大面积(25000μm2)AlGaN基雪崩光电二极管(APD)在90pW(280 Nm)处的信号增益为10万，建立了器件的太阳盲区。
We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW ( 280 nm, establishing solar blindness of the device.We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW ( 280 nm, establishing solar blindness of the device.