27.12MHz GaN Bi-directional resonant power converter
27.12MHz GaN Bi-directional resonant power converter
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DOI：
10.1109/compel.2015.7236440
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发表时间：
2015-07
期刊：
影响因子：
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通讯作者：
Lei Gu;Wei Liang;Luke Raymond;J. Rivas-Davila
中科院分区：
文献类型：
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作者：
Lei Gu;Wei Liang;Luke Raymond;J. Rivas-Davila
谐振DC-DC转换器通常使用肖特基二极管进行高频整流。硅肖特基二极管具有相对较低的额定电压，并且当驱动足够硬时存在反向恢复型损耗。SiC肖特基二极管可以在高频下工作，但会产生更高的传导损耗。本文提出了一种具有两个接地参考开关的双向直流-直流谐振变换器。原型转换器在170 V电源和50 V负载之间提供400 W，而在相反方向提供250 W。本文中提出的转换器可以潜在地用于诸如无线功率传输、燃料电池和蓄电池应用、总线转换器等的应用中。
Resonant dc-dc converter regularly use Schottky diodes for high frequency rectification. Si Schottky diodes have relatively low voltage ratings and present reverse-recovery type losses when driven hard enough. SiC Schottky diodes can operate at high frequencies, but incur higher conduction losses. This paper presents a bidirectional dc-dc resonant converter having two ground referenced switches. The prototype converter delivers 400 W between a source of 170 V and a load of 50 V while delivering 250 W in the opposite direction. The converter presented herein can potentially be used in applications such as wireless power transfer, fuel cell and battery applications, bus converters, etc.