(Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications
(Invited) Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications
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（特邀）电子和光电应用中能带设计的锗锡相关半导体异质结构的开发
DOI：
10.1149/09204.0041ecst
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
and Shigeaki Zaima
中科院分区：
文献类型：
--
作者：
Osamu Nakatsuka;Masahiro Fukuda;Mitsuo Sakashita;Masashi Kurosawa; Shigehisa Shibayama;and Shigeaki Zaima
我们研究了Ge 1 − xSnx和Ge 1 − x− ySixSny的IV族半导体合金薄膜的晶体和电子性质。这些半导体材料保证了具有I型能带对准的有效能带工程。此外，我们还通过光致发光光谱的测量研究了Ge 1 − x− ySixSny/Ge 1 − xSnx/Ge 1 − x− ySixSny双异质结的光电特性。
We have investigated the crystalline and electronic properties of group-IV semiconductor alloy thin films of Ge1− xSnx and Ge1− x− ySixSny. These semiconductor materials promise effective energy band engineering with type-I band alignment. Also, we have investigated the optoelectronic properties of Ge1− x− ySixSny/Ge1− xSnx/Ge1− x− ySixSny double heterostructure with measuring photoluminescence spectroscopy.