Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices
Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices
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DOI：
10.1016/j.scriptamat.2016.10.006
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发表时间：
2017-02-01
影响因子：
6
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
--
作者：
Liu, Dong;Francis, Daniel;Kuball, Martin
采用原位聚焦离子束横截面和扫描电子显微镜成像技术研究了金刚石生长的晶种对GaN/金刚石晶片微结构特性的影响。微观结构研究表明，晶种条件是获得最佳材料的关键参数，允许制造没有微观缺陷的金刚石衬底GaN晶片，并且在825摄氏度的热退火下具有结构稳定性。使用正确的晶种条件还导致在四英寸金刚石上GaN晶片上的均匀热性质，这对于它们用于超高功率微波电子器件至关重要。(C)2016 Acta Materialia Inc.由爱思唯尔有限公司出版。保留所有权利。
The impact of seeding of the diamond growth on the microstructural properties of GaN-on-diamond wafers was studied using in situ focused ion beam cross-sectioning and scanning electron microscopy imaging. Microstructural studies revealed that the seeding conditions are a critical parameter to obtain an optimal material, allowing the manufacture of GaN-on-diamond wafers with no microscopic defects and with structural stability under thermal annealing at 825 degrees C. The use of the right seeding conditions also results in homogeneous thermal properties across four inch GaN-on-diamond wafers, which is of critical importance for their use for ultra-high power microwave electronic devices. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.