Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer
Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer
复制标题
使用 SiNx 作为界面钝化层改善 HfO2 栅介质 GaAs MOS 器件的界面性能
DOI：
10.1088/1674-1056/22/9/097301
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发表时间：
2013
影响因子：
1.7
通讯作者：
Huang Yuan
中科院分区：
文献类型：
--
作者：
Zhu Shu-Yan;Xu Jing-Ping;Wang Li-Sheng;Huang Yuan
以HfO2为栅电介质，氮化硅(SiNx)为中间层，制备了一种GaAsMOS电容器。实验结果表明，含有SiNx离子液体的样品具有改善的电容-电压特性，L
A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance—voltage characteristic, l