Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
Theoretical Calculation of Photoabsorption of Various Polymers in an Extreme Ultraviolet Region
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各种聚合物在极紫外区光吸收的理论计算
DOI：
10.1143/jjap.38.7109
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发表时间：
1999
影响因子：
1.5
通讯作者：
D. Dixon
中科院分区：
文献类型：
--
作者：
N. Matsuzawa;H. Oizumi;S. Mori;S. Irie;S. Shirayone;E. Yano;S. Okazaki;A. Ishitani;D. Dixon
我们已经计算出的线性吸收系数的各种抗蚀剂聚合物使用的质量吸收系数在13 nm和密度从图形理论的处理Bicerano派生。这些值表明，当厚度为3000 μ m时，用于193-nm、248-nm和365-nm光刻的常规抗蚀剂在13 nm处的透射率为约30%，当厚度为1000 μ m时，为60-70%。这表明，常规抗蚀剂适用于使用硬掩模层的EUVL（极紫外光刻）薄层抗蚀剂（TLR）工艺，但其大的光吸收使其不适用于单层抗蚀剂（SLR）工艺。为了设计适用于SLR工艺的聚合物，我们进一步计算了约150种聚合物的吸收。结果表明，引入芳香基团的聚合物不仅降低了在13 nm处的吸收，但也增加了耐蚀刻性。
We have calculated the linear absorption coefficients of various resist polymers using the mass absorption coefficients at 13 nm and the density obtained from the graph-theoretical treatment derived by Bicerano. The values indicate that the transmittance at 13 nm of conventional resists used in 193-nm, 248-nm and 365-nm lithography is about 30% when the thickness is 3000 Å and 60–70% when it is 1000 Å. This shows that conventional resists are suitable for an EUVL (extreme ultraviolet lithography) thin-layer resist (TLR) process using a hard-mask layer, but their large photoabsorption makes them unsuitable for a single-layer resist (SLR) process. To design polymers that are suitable for an SLR process, we further calculated the absorption of about 150 polymers. The results suggest that the introduction of aromatic groups into a polymer not only reduces the absorption at 13 nm but also increases the etching resistance.