Femtosecond laser irradiation-induced infrared absorption on silicon surfaces
Femtosecond laser irradiation-induced infrared absorption on silicon surfaces
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DOI：
10.1080/19475411.2015.1057268
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发表时间：
2015-04
影响因子：
3.9
通讯作者：
Qinghua Zhu;M. Shen
中科院分区：
文献类型：
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作者：
Qinghua Zhu;M. Shen
在简单的实验条件下，飞秒激光脉冲辐照单晶硅后，单晶硅的带隙能量以下的近红外吸收显著增强。在NIR范围内的吸收增加主要取决于飞秒激光脉冲能量、脉冲数和脉冲持续时间。拉曼光谱分析表明，激光辐照后，硅表面由硅纳米结构和非晶硅组成。飞秒激光辐照导致形成纳米晶、非晶和具有微结构的晶体硅衬底表面的复合物。该复合材料在可见光波长以及NIR波长处具有光学吸收增强。该复合材料可用于NIR检测器，例如用于气体传感，因为其表面积大。
The near-infrared (NIR) absorption below band gap energy of crystalline silicon is significantly increased after the silicon is irradiated with femtosecond laser pulses at a simple experimental condition. The absorption increase in the NIR range primarily depends on the femtosecond laser pulse energy, pulse number, and pulse duration. The Raman spectroscopy analysis shows that after the laser irradiation, the silicon surface consists of silicon nanostructure and amorphous silicon. The femtosecond laser irradiation leads to the formation of a composite of nanocrystalline, amorphous, and the crystal silicon substrate surface with microstructures. The composite has an optical absorption enhancement at visible wavelengths as well as at NIR wavelength. The composite may be useful for an NIR detector, for example, for gas sensing because of its large surface area.