REMn2Si2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties
REMn2Si2 (RE=Y, Tb, Dy, Ho) Single Crystals Grown from Lead Flux and Magnetic Properties
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由铅熔剂生长的 REMn2Si2 (RE=Y、Tb、Dy、Ho) 单晶和磁性
DOI：
10.1143/jjap.41.l555
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发表时间：
2002
影响因子：
1.5
通讯作者：
P. Rogl
中科院分区：
文献类型：
--
作者：
S. Okada;K. Kudou;T. Mori;K. Iizumi;T. Shishido;Takaho Tanaka;K. Nakajima;P. Rogl
在氩气保护下，用高温铅助熔剂缓慢冷却熔体，生长出REMn_2Si_2（RE=Y，Tb，Dy，Ho）单晶。获得的REMn2Si2晶体为具有良好（001）面的薄板，并且最大晶体具有约2.6×2.6×0.02 mm3的最大尺寸。生长的REMn_2Si_2晶体用于化学分析，在低温下的晶胞参数和磁化率的测量。晶体的磁化率测量的结果进行了讨论。
Single crystals of REMn2Si2 (RE=Y, Tb, Dy, Ho) were grown from a high-temperature lead metal flux by slowly cooling the melt in an argon atmosphere. The REMn2Si2 crystals were obtained as thin plates with well-developed (001) faces, and the largest crystals have maximum dimensions of about 2.6×2.6×0.02 mm3. The as-grown REMn2Si2 crystals were used for chemical analyses, measurements of unit cell parameters and magnetic susceptibility at low temperatures. The results of magnetic susceptibility measurements of the crystals are discussed.