Macro van der Waals p-n heterojunction based on SnSe and SnSe2
Macro van der Waals p-n heterojunction based on SnSe and SnSe2
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DOI：
10.1088/1361-6528/ab9a77
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发表时间：
2020-06
期刊：
影响因子：
3.5
通讯作者：
Yujia Zhong;Li Zhang;Wenduo Chen;Hongwei Zhu
中科院分区：
文献类型：
--
作者：
Yujia Zhong;Li Zhang;Wenduo Chen;Hongwei Zhu
基于二维材料的货车范德华（vdW）异质结在新兴的光电子学领域引起了人们极大的关注。然而，低效率的单晶生长显着限制了vdW异质结的实际应用。在这里，我们报告了一个宏观SnSe/SnSe 2异质结组装共形转移面内的p型SnSe的n型SnSe 2合成的化学气相沉积。与单一的SnSe或SnSe 2光电探测器相比，SnSe/SnSe 2 vdW光电探测器具有良好的匹配带对准，表现出显著增强的性能，响应率为17.5 mA W−1，响应时间为17 ms。
Van der Waals (vdW) heterojunctions based on two-dimensional materials have attracted great attention in emerging photoelectronics. However, the low-efficiency growth of single crystals significantly limits the practical applications of vdW heterojunctions. Here, we report a macro SnSe/SnSe2 heterojunction assembled by conformally transferring in-plane p-type SnSe on n-type SnSe2 synthesized by chemical vapor deposition. With well-matched band alignments, the SnSe/SnSe2 vdW photodetector exhibits dramatically enhanced performance with a responsivity of 17.5 mA W−1 and a response time of 17 ms, comparing with the sole SnSe or SnSe2 based photodetector.