Dielectric breakdown of PDMS thin films
Dielectric breakdown of PDMS thin films
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DOI：
10.1088/0960-1317/23/6/067001
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发表时间：
2013-06-01
影响因子：
2.3
通讯作者：
Bergbreiter, Sarah
中科院分区：
文献类型：
--
作者：
Gerratt, Aaron P.;Bergbreiter, Sarah
本说明提供了硅电极之间厚度为 2 至 14 μm 的聚二甲基硅氧烷 (PDMS) 薄膜的介电击穿数据。结果表明，击穿场对电极间隙和形状有很强的依赖性。击穿场范围为 250 至 635 V μ m(-1)，具体取决于电极几何形状和间隙，接近相同尺寸气隙击穿场的 10 倍。该结果对于了解机电微系统中使用的 PDMS 薄膜的性能限制至关重要。
This note presents the data on the dielectric breakdown of polydimethylsiloxane (PDMS) thin films with thicknesses from 2 to 14 mu m between the silicon electrodes. The results demonstrate that there is a strong dependence of the breakdown field on both the electrode gap and shape. The breakdown fields range from 250 to 635 V mu m(-1), depending on the electrode geometry and gap, approaching 10x the breakdown fields for air gaps of the same size. The results are critical for understanding the performance limits of PDMS thin films used in the electromechanical microsystems.