Magnetic Anisotropy Engineering in Thin Film Ni Nanostructures by Magnetoelastic Coupling
Magnetic Anisotropy Engineering in Thin Film Ni Nanostructures by Magnetoelastic Coupling
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DOI：
10.1103/physrevapplied.1.021001
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发表时间：
2014-03-27
影响因子：
4.6
通讯作者：
Klaeui, M.
中科院分区：
文献类型：
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作者：
Finizio, S.;Foerster, M.;Klaeui, M.
磁弹性耦合是一种无需传统电流产生磁场即可用于磁化操纵的现象，因此，这可能为低功耗数据存储设备铺平道路。在这里，我们报告了镍纳米结构方块中由压电应变引起的磁单轴各向异性的定量分析。通过施加应变，镍纳米结构方块中的磁畴可以通过镍中的磁弹性效应来控制。应变引起的各向异性使正方形中的磁畴壁发生位移，导致磁畴尺寸发生变化。通过将实验与微磁模拟进行比较，可以量化所得的单轴各向异性。我们发现磁致伸缩常数 lambda(s) = -26 ppm 非常一致，证实了从压电到 Ni 纳米结构的完全应变转移以及块状 lambda(s) 的保留。
A phenomenon that can be exploited for the manipulation of magnetization without the conventional current-generated magnetic fields is magnetoelastic coupling, which might, thus, pave the way for low-power data-storage devices. Here, we report a quantitative analysis of the magnetic uniaxial anisotropy induced by piezoelectric strain in Ni nanostructured squares. By applying strain, the magnetic domains in Ni nanostructured squares can be manipulated by the magnetoelastic effect in the Ni. The strain-induced anisotropy displaces the domain walls in the square leading to changes in the domain sizes. By comparing the experiments with micromagnetic simulations, the resulting uniaxial anisotropy is quantified. We find a good agreement for a magnetostrictive constant of lambda(s) = -26 ppm, confirming a full strain transfer from the piezoelectric to the Ni nanostructures and the retainment of a bulklike lambda(s).