Dopant profiling with the scanning electron microscope—A study of Si
Dopant profiling with the scanning electron microscope—A study of Si
复制标题
用扫描电子显微镜进行掺杂剂分析——硅的研究
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
C. Humphreys
中科院分区：
文献类型：
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作者：
S. L. Elliott;R. Broom;C. Humphreys
本文描述了用扫描电子显微镜(SEM)利用二次电子详细研究半导体掺杂剂分布的结果。该技术已应用于各种掺杂硅测试结构以及金属氧化物场效应晶体管。我们已经证明，可以从直径为一纳米的掺磷区域检测到对比度。在掺杂浓度小于1016 cm−3的p型区域也可以测量到对比度。我们在扫描电子显微镜上研究了掺杂对比度随样品温度和横跨p-n结的偏压的变化。这些实验表明，掺杂对比度主要是由于半导体器件中的内置电压导致了样品外部的局域场(贴片场)，这影响了检测到的二次电子的数量。为这项技术的使用者提供了一套简明的指导方针，包括最大限度地使用扫描电子显微镜的最佳操作条件。
This article describes the results of a detailed study of semiconductor dopant profiling with the scanning electron microscope (SEM) using secondary electrons. The technique has been applied to a wide variety of doped silicon test structures as well as a metal–oxide field-effect transistor. We have demonstrated that contrast can be detected from p-doped regions as thin as one nanometer across. Contrast can also be measured from p-type regions with doping concentrations less than 1016 cm−3. We have studied the variation of doping contrast with specimen temperature and with a bias applied across a p-n junction in situ in the SEM. These experiments demonstrate that doping contrast is mainly due to the built-in voltages in semiconductor devices which result in local fields (patch fields) outside the specimen which influence the number of secondary electrons detected. A concise set of guidelines is provided for users of this technique, including the optimum SEM operating conditions that should be used for maxi...