High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition
High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition
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DOI：
10.1016/j.jallcom.2010.10.189
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发表时间：
2011-02
影响因子：
6.2
通讯作者：
R. Xiang;Y. Fang;J. Dai;Luo Zhang;C. Su;Z. H. Wu;Chenhui Yu;H. Xiong;Chenlong Chen
中科院分区：
文献类型：
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作者：
R. Xiang;Y. Fang;J. Dai;Luo Zhang;C. Su;Z. H. Wu;Chenhui Yu;H. Xiong;Chenlong Chen
本文报道了在AlN/Si（111）模板上用金属有机物化学气相沉积（MOCVD）方法生长GaN外延层的研究。通过在固定时间内简单地将AlN的生长条件改变为GaN层的生长条件，实现了成分渐变的AlxGa 1 −xN中间层。研究了不同AlxGa 1-xN层厚度（280 nm、460 nm、575 nm和750 nm）下GaN薄膜的表面形貌、结晶质量和应力。结果发现，GaN薄膜的性能高度依赖于AlxGa 1 −xN夹层厚度。采用460 nm厚的AlxGa 1 −xN层可以获得厚度达1.2μm的高质量无裂纹GaN薄膜。
The growth of GaN epilayers on AlN/Si (111) templates with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition (MOCVD) is reported in this work. The composition-graded AlxGa1−xN interlayer was achieved by simply changing the growth condition of AlN to that of GaN layers during a fixed time. The surface morphology, crystalline quality and stress of GaN films have been investigated with different AlxGa1−xN interlayer thickness, 280nm, 460nm, 575nm, and 750nm. It was found that the properties of GaN films are highly dependent on the AlxGa1−xN interlayer thickness. High quality crack-free GaN films up to 1.2μm can be achieved with 460nm thick AlxGa1−xN layer.