"In situ" XPS study of band structures at Cu2O/TiO2 heterojunctions interface
"In situ" XPS study of band structures at Cu2O/TiO2 heterojunctions interface
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DOI：
10.1016/j.susc.2009.07.030
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发表时间：
2009-09-01
期刊：
影响因子：
1.9
通讯作者：
Ohuchi, Fumio S.
中科院分区：
文献类型：
--
作者：
Huang, Lei;Peng, Feng;Ohuchi, Fumio S.
为了研究缺陷对Cu2O/TiO2异质结电子结构的影响，在不同缺陷浓度的TiO2上连续沉积了Cu2O薄层，并利用原位x射线光电子能谱（XPS）研究了其能带弯曲和偏移特性。采用Ar+溅射法制备了带有缺陷的TiO2衬底，然后在氧气气氛中进行不同温度退火。TiO2表面缺陷的存在显著影响界面处能带弯曲和能带偏移：TiO2表面缺陷越多，界面处能带弯曲越少，导致导带偏移越小。在还原后的TiO2表面，Cu2O被不成比例地分解成CuO和Cu。(C) 2009 Elsevier B.V.版权所有
In an attempt to investigate influence of the defects on electronic structure of Cu2O/TiO2 heterojunctions, thin Cu2O layers were successively deposited on TiO2 that has different levels of defect concentrations, and the resultant band bending and offset characteristics were studied by in situ X-ray photoelectron spectroscopy (XPS). The TiO2 substrates with defects were prepared by Ar+ sputtering, followed by annealing at different temperatures in oxygen atmosphere. Presence of the defects in TiO2 surface dramatically influences on the band bending and band offset at the interface: more defects are on TiO2 surface, less band bending are at the interface, inducing smaller conduction band offsets. On the reduced TiO2 surface, Cu2O was disproportionately decomposed to form CuO and Cu. (C) 2009 Elsevier B.V. All rights reserved.