An SRAM SEU cross section curve physics model
An SRAM SEU cross section curve physics model
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SRAM SEU 截面曲线物理模型
DOI：
10.1109/tns.2021.3129185
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发表时间：
2022
影响因子：
1.8
通讯作者：
and T. Ohshima
中科院分区：
文献类型：
--
作者：
D. Kobayashi;K. Hirose;K. Sakamoto;Y. Tsuchiya;S. Okamoto;S. Baba;H. Shindou;O. Kawasaki;T. Makino;and T. Ohshima
静态随机存取存储器（SRAM）容易发生单粒子翻转（SEU），也称为软错误，这是由于单次辐射引起的瞬态噪声造成的。束流测试已被广泛用于测量SRAM的单粒子翻转截面作为带电粒子辐射的线性能量转移（LET）的函数。横截面随LET的变化称为横截面曲线，它在分析镦粗率以保证硬度方面起着至关重要的作用。已经开发了各种分析模型来描述SRAM的单粒子翻转截面曲线，并且已经证明它们在降低束流测试成本以及揭示测试结果背后的物理方面是有用的。然而，它们涉及任意参数，这使得在没有任何梁结果的情况下预测横截面曲线具有挑战性。此外，分析横截面曲线或横截面的LET依赖性的当前方法依赖于与在分析电源电压依赖性中使用的模型不同的模型，电源电压依赖性由于低功率操作的需求而变得越来越重要。为了克服这些问题，本文提出了一个统一的方程，描述了LET和电源电压的SRAM单粒子翻转截面的依赖关系。它只包括物理上清晰和熟悉的SEU研究人员的参数。除了给出可能的限制外，与文献数据的比较表明，它可以应用于从早期1000 nm规模到当前10 nm规模技术节点的几代人中的体和绝缘体上硅（SOI）工艺制造的SRAM。
Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due to transient noise caused by a single strike of radiation. Beam testing has been extensively used to measure the SEU cross section of SRAMs as a function of the linear energy transfer (LET) of charged particle radiation. The evolution of the cross section as a function of LET is called the cross section curve, which plays a vital role in upset rate analysis for hardness assurance. Various analytical models have been developed to describe SRAM SEU cross section curves, and they have proven to be useful in reducing the cost of beam testing as well as revealing the physics behind test results. However, they involve arbitrary parameters, which make it challenging to predict cross section curves without any beam results. Moreover, the current method of analyzing cross section curves or the LET dependence of cross sections relies on a model different from that is used in the analysis of power-supply-voltage dependence, which is becoming increasingly important because of the demand for low-power operation. To overcome these problems, this article proposes a unified equation that describes both LET and the power-supply-voltage dependence of SRAM SEU cross sections. It comprises only parameters that are physically clear and familiar to SEU researchers. As well as giving possible constraints, comparisons with data from the literature suggest it can be applied to SRAMs fabricated in bulk and silicon-on-insulator (SOI) processes across generations from the early 1000-nm-scale to the current 10-nm-scale technology nodes.