Controlled synthesis of single-crystal SnSe nanoplates
Controlled synthesis of single-crystal SnSe nanoplates
复制标题
单晶 SnSe 纳米板的控制合成
DOI：
10.1007/s12274-014-0676-8
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发表时间：
2015-01-01
期刊：
影响因子：
9.9
通讯作者：
Liu, Zhongfan
中科院分区：
文献类型：
--
作者：
Zhao, Shuli;Wang, Huan;Liu, Zhongfan
二维层状IV-VI族硫族化合物在下一代光电、光伏和热电器件中的应用引起了极大的兴趣。然而，高质量的IV-VI族硫属化合物纳米结构的可控合成面临着巨大的挑战，阻碍了其深入研究和实际应用。在这里，我们报告，第一次，一个可行的合成单晶IV-VI SnSe纳米片在云母基板上的气相传输沉积的控制方式。所生长的SnSe纳米片具有近似正方形的形状，具有从1到6 μ m变化的可控边长。电输运和光电测量表明，所获得的SnSe纳米片显示p型导电性和高的光响应性。
Two-dimensional layered IV-VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV-VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV-VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 mu m. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.