Epitaxial growth and electronic structure of LaTiOx films
Epitaxial growth and electronic structure of LaTiOx films
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DOI：
10.1063/1.1481767
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发表时间：
2002-05-27
影响因子：
4
通讯作者：
Hwang, HY
中科院分区：
文献类型：
--
作者：
Ohtomo, A;Muller, DA;Hwang, HY
采用脉冲激光沉积法在（001）钙钛矿氧化物衬底上生长了LaTiOx薄膜。单相钙钛矿LaTiO 3和层状La2Ti2O7薄膜可以通过改变氧分压和衬底温度在生长过程中稳定。我们已经获得了LaTiOx薄膜的晶体学和电子相图，证明了通过利用界面能在化学上不利的生长条件下改变钛价从3+到4+的能力。(C)2002年美国物理学会。
LaTiOx films have been grown on (001) perovskite oxide substrates by pulsed-laser deposition. Both single-phase perovskite LaTiO3 and layered La2Ti2O7 films could be stabilized by varying the oxygen partial pressure and substrate temperature during growth. We have obtained a crystallographic and electronic phase diagram for LaTiOx films, demonstrating the ability to vary the titanium valence from 3+ to 4+ in thermodynamically unfavorable growth conditions by utilizing interface energies. (C) 2002 American Institute of Physics.