Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode
Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode
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DOI：
10.7567/jjap.53.09pa04
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发表时间：
2014-09
影响因子：
1.5
通讯作者：
Takao Shimizu;T. Yokouchi;T. Shiraishi;T. Oikawa;P. Krishnan;H. Funakubo
中科院分区：
文献类型：
--
作者：
Takao Shimizu;T. Yokouchi;T. Shiraishi;T. Oikawa;P. Krishnan;H. Funakubo
研究了热处理条件对金属有机化学气相沉积(Hf0.5Zr0.5)O2薄膜的物相和电学性能的影响。在沉积后采用较低的温度或较短的时间进行后热处理，四方相的体积分数增加，从而产生较高的介电常数。另一方面，热处理温度越高、热处理时间越长的薄膜，单斜晶相的体积分数越大。这些薄膜的铁电性能和介电性能都很差。在中间热处理条件下，获得了良好的铁电性能和显着的正交相体积分数。这些结果为理解HfO2基薄膜的铁电性来源和控制薄膜的物相和电学性质提供了有用的信息。
The effect of the heat treatment conditions on the constituent phases and electrical properties of (Hf0.5Zr0.5)O2 films deposited by the metalorganic chemical vapor deposition was investigated. By using a low temperature or short duration for post-heat treatment after the deposition, the volume fraction of the tetragonal phase increases, resulting in a high dielectric constant. On the other hand, the volume fraction of the monoclinic phase increased in the films that were heat-treated at higher temperatures and exposed to longer heat treatment duration. The ferroelectric with and dielectric properties of these films were greatly inferior. Superior ferroelectric properties a significant volume fraction of orthorhombic phase were achieved for intermediate heat treatment conditions. These results give useful information to understand the origin of the ferroelectricity and to control the phases and electrical properties in HfO2-based films.