Performance of Germanium and Silicon Surface Barrier Diodes as Alpha‐Particle Spectrometers
Performance of Germanium and Silicon Surface Barrier Diodes as Alpha‐Particle Spectrometers
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锗和硅表面势垒二极管作为 α 粒子光谱仪的性能
DOI：
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发表时间：
1959
期刊：
影响因子：
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通讯作者：
J. Mayer
中科院分区：
文献类型：
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作者：
J. Mayer
在室温下工作的锗表面势垒二极管的特性使其作为阿尔法粒子谱仪特别有用。这些单元的小尺寸、稳定性、能量分辨率以及对β和γ辐射的相对不敏感度表明其在医学和核研究中的应用。研究了势垒宽度(≅1μ)小于入射α粒子射程的Au-Ge和Au-Si表面势垒。在锗单元中，对α粒子的脉冲高度响应随着能量的增加而线性增加，当能量增加到7.5 Mev时，脉冲高度响应单调增加，但随着能量增加到12 Mev，增加的速度变慢。在硅中，线性度的偏差发生在6 Mev左右。观察到的脉冲高度和能量之间的线性关系简单地取决于这样一个事实：激发的载流子数目与粒子能量成正比，并且载流子在势垒处收集的时间小于电路时间常数。给出了二极管暂态响应的一般理论。
The characteristics of a germanium surface barrier diode operated at room temperature make it particularly useful as an alpha‐particle spectrometer. The small size, stability, energy resolution, and relative insensitivity to β and γ radiation of the units suggest applications in medical and nuclear research. Studies were made on Au–Ge and Au–Si surface barriers with a barrier width (≅1 μ) less than the range of the incident alpha particles. In the germanium units, the pulse‐height response to alpha particles increased linearly with energy up to 7.5 Mev and then increased monotonically but more slowly as the energy rose to 12 Mev. In silicon the deviation from linearity occurred around 6 Mev. The observed linearity between pulse height and energy depends simply on the fact that the number of carriers excited is proportional to the particle energy and that the time for the carriers to be collected at the barrier is less than the circuit time constant. The general theory of the transient response of the diod...