Effect of interfacial water formed between graphene and SiO2/Si substrate
Effect of interfacial water formed between graphene and SiO2/Si substrate
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DOI：
10.7567/apex.10.075102
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发表时间：
2017-06
影响因子：
2.3
通讯作者：
T. Koyama;Takumi Inaba;K. Komatsu;S. Moriyama;M. Shimizu;Y. Homma
中科院分区：
文献类型：
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作者：
T. Koyama;Takumi Inaba;K. Komatsu;S. Moriyama;M. Shimizu;Y. Homma
在环境空气中，界面水可以存在于石墨烯和衬底表面之间。水对石墨烯电性能的影响是复杂的，并且取决于基底材料。根据拉曼光谱研究了石墨烯与SiO2/Si衬底之间形成的界面水的影响。界面水的作用受SiO2表面亲水性的影响。虽然界面水抑制了石墨烯和SiO2之间的电荷转移，但由于水分子在高度亲水的SiO2表面上排列的偶极矩，它诱导了石墨烯中的空穴掺杂。
Interfacial water can exist between graphene and a substrate surface in ambient air. The effects of water on the electrical properties of graphene are complex and depend on the substrate material. We investigated the effects of interfacial water formed between graphene and a SiO2/Si substrate according to the Raman spectra. The effect of the interfacial water was influenced by the hydrophilicity of the SiO2 surface. While the interfacial water inhibited the charge transfer between graphene and SiO2, it induced hole-doping in graphene because of the dipole moment of the water molecules aligned on the highly hydrophilic SiO2 surface.