Enhancing electrical properties of LiNbO3/AlGaN/GaN transistors by using ZnO buffers
Enhancing electrical properties of LiNbO3/AlGaN/GaN transistors by using ZnO buffers
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DOI：
10.1063/1.4811820
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发表时间：
2013-07
影响因子：
3.2
通讯作者：
L. Hao;Yanrong Li;Jun Zhu;Zhipeng Wu;Jie Deng;H. Zeng;Jihua Zhang;Xingzhao Liu;Wanli Zhang
中科院分区：
文献类型：
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作者：
L. Hao;Yanrong Li;Jun Zhu;Zhipeng Wu;Jie Deng;H. Zeng;Jihua Zhang;Xingzhao Liu;Wanli Zhang
采用脉冲激光沉积技术在ZnO缓冲的AlGaN/GaN模板上沉积了LiNbO 3（LN）铁电薄膜。采用反射式高能电子衍射仪、原子力显微镜和X射线衍射仪分别对缓冲层和LN薄膜的微观结构进行了表征。利用Cu/Si 3 N4双层掩模制备了LN/ZnO/AlGaN/GaN晶体管，并对其电学性能进行了研究。具有LN栅极层的制造的晶体管表现出常关特性。由于5 nm厚的ZnO层对界面的修饰，晶体管的电学性能得到了极大的提高。器件的最大漏电流从27 mS/mm增加到46 mS/mm，最大漏电流从97 mA/mm增加到204 mA/mm。通过对器件能带结构和电荷分布的数值计算，提出了器件的工作机理。
LiNbO3 (LN) ferroelectric films were deposited on the ZnO buffered AlGaN/GaN templates by pulse laser deposition technique. The microstructures of the buffer layers and LN films were characterized by reflective high energy electron diffraction, atomic force microscope, and X-ray diffraction, respectively. With the help of Cu/Si3N4 double-layer masks, LN/ZnO/AlGaN/GaN transistors were fabricated and the electrical properties were studied. Normally off characteristics were exhibited for the fabricated transistors with LN gate layers. Due to the modifications of the 5-nm-thick ZnO layer to the interface, the electrical properties of the transistor were enhanced greatly. The maximum transconductance increased from 27 to 46 mS/mm, and the maximum drain current increased from 97 to 204 mA/mm. The operation mechanisms of the devices were proposed by the numerical calculations of the electronic band structure and charge distribution.