Oxide mediated liquid–solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates
Oxide mediated liquid–solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates
复制标题
Si(110) 基底上氧化物介导的高纵横比排列硅化金纳米线的液固生长
DOI：
10.1088/0957-4484/20/46/465601
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发表时间：
2009
期刊：
影响因子：
3.5
通讯作者：
P. V. Satyam
中科院分区：
文献类型：
--
作者：
U. Bhatta;A. Rath;J. K. Dash;J. Ghatak;Lai Yi;Chuan;P. V. Satyam
使用气-液-固方法生长的硅纳米线是纳米电子应用的有前途的候选者。纳米线在硅化学气相沉积期间从Au-Si催化剂生长。本文采用氧化物介导的液-固生长机制，研究了温度、界面氧化物和衬底取向对纳米金硅化物结构成核和生长动力学的影响。使用真实的时间原位高温透射电子显微镜（具有40 ms的时间分辨率），我们显示了在Si（110）衬底上的金薄膜原位退火过程中，在界面处存在天然氧化物的情况下，形成了高纵横比（≤ 15.0）对准的硅化金纳米棒。生长速率的台阶和真实的时间电子衍射表明，除了未反应的金纳米结构外，表面还存在液态的Au-Si纳米合金结构。这些结果可能使我们能够用Au-Si合金作为催化剂来设计纳米线和类似结构的生长。
Silicon nanowires grown using the vapor–liquid–solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au–Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid–solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio (≈15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au–Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au–Si alloy as a catalyst.