A study of the damage on FIB-prepared TEM samples of AlxGa1-xAs
A study of the damage on FIB-prepared TEM samples of AlxGa1-xAs
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DOI：
10.1093/jmicro/dfh062
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发表时间：
2004-01-01
期刊：
影响因子：
--
通讯作者：
Sugiyama, Y
中科院分区：
文献类型：
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作者：
Yabuuchi, Y;Tametou, S;Sugiyama, Y
研究了聚焦离子束（FIB）铣削对AlGaAs晶体TEM样品的损伤。透射电子显微镜（TEM）观察到AlGaAs样品的侧壁损伤为非晶层。随着FIB加速电压从5 ~ 30 kV的增加，非晶层厚度呈线性增加。当加速电压低于5w时，AlxGa1-xAs的非晶层厚度在3nm处保持恒定，且与Al浓度x无关。当加速电压大于5 kV时，AlxGa1-xAs的非晶层厚度随Al浓度的增加而减小。5kv的FIB铣削有效地减小了非晶层的厚度，并为制备的用于TEM和扫描电子显微镜（SEM）的多层AlxGa1-xAs样品提供了平坦的侧壁。
The damage produced by focused ion beam (FIB) milling on a TEM sample of AlGaAs crystals has been studied. The damage observed on the sidewall of an AlGaAs transmission electron microscopy (TEM) sample was an amorphous layer. The thickness of the amorphous layer linearly increased with an increase in FIB accelerating voltage from 5 to 30 kV. The thickness of the amorphous layer of AlxGa1-xAs was constant at 3 nm and was independent of the Al concentration x when the accelerating voltage was below 5 W. The thickness of the amorphous layer of AlxGa1-xAs decreased with an increase in Al concentration x when the accelerating voltage was above 5 kV. FIB milling at 5 kV effectively minimizes the thickness of the amorphous layer and also provides flat sidewalls on multilayer samples of AlxGa1-xAs that are prepared for TEM and scanning electron microscopy (SEM).