Spontaneous Lateral Phase Separation of AlInP During Thin Film Growth and its Effect on Luminescence
Spontaneous Lateral Phase Separation of AlInP During Thin Film Growth and its Effect on Luminescence
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AlInP 薄膜生长过程中的自发横向相分离及其对发光的影响
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
E. Fitzgerald
中科院分区：
文献类型：
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作者：
K. Mukherjee;A. Norman;A. Akey;T. Buonassisi;E. Fitzgerald
采用透射电子显微镜和原子探针层析成像技术研究了金属有机化学气相沉积法生长AlxIn1−xP薄膜过程中自发横向相分离的发生，以定量观察这一现象。在低于750 °C沉积的几乎晶格匹配的薄膜中观察到各向异性和相干的成分调制，其具有与生长温度成反比的厚度的准线性放大。调制的周期性随生长温度呈指数增长。相分离和均匀直接带隙AlxIn1−xP沉积在变质InyGa1−yAs梯度缓冲层上的光致发光的比较显示，根据原子探针成分表征，峰值发射能量降低，而发光强度没有任何下降。此外，即使在室温下也观察到低带隙区域中的载流子捕获的迹象。Whi...
The occurrence of spontaneous lateral phase separation during thin film growth of AlxIn1−xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap AlxIn1−xP deposited on metamorphic InyGa1−yAs graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. Whi...