Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures

Effect of Perforation on the Thermal and Electrical Breakdown of Self‐Rolled‐Up Nanomembrane Structures
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DOI:
10.1002/admi.201901022
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发表时间:
2019-09
影响因子:
5.4
通讯作者:
J. Michaels;Derek Wood;Paul J. Froeter;Wen Huang;D. Sievers;Xiuling Li
J. Michaels;Derek Wood;Paul J. Froeter;Wen Huang;D. Sievers;Xiuling Li
中科院分区:
材料科学3区
文献类型:
--
作者:
J. Michaels;Derek Wood;Paul J. Froeter;Wen Huang;D. Sievers;Xiuling Li

文献摘要

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应变诱导自卷膜(S-RuM)是通过从机械支撑上释放应变层或层堆叠而自发形成的结构,在被动光子学、电子学和生物工程中具有独特的应用。根据应变层的热特性,这些结构可能会经历各种热致变形。通过在膜上战略性地添加穿孔可以避免和增强这些变形。这项研究报告了使用穿孔来改变应变氮化硅 S-RuM 结构的热效应。演示了一种具有明确热阈值、超小占地面积和 2-3 V 额定电压的可编程熔丝,它可以作为电力电子电路的片上传感设备。
Strain‐induced self‐rolled‐up membranes (S‐RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S‐RuM structures. A programmable fuse with well‐defined thermal threshold, ultrasmall footprint, and 2–3 V voltage rating is demonstrated, which can potentially serve as an on‐chip sensing device for power electronic circuits.