Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
复制标题
DOI：
10.1109/led.2010.2050574
复制
发表时间：
2010-06
影响因子：
4.9
通讯作者：
L. Gomez;C. Ni Chleirigh;P. Hashemi;J. Hoyt
中科院分区：
文献类型：
--
作者：
L. Gomez;C. Ni Chleirigh;P. Hashemi;J. Hoyt
研究了< 110 > /(100)取向非对称应变sige p- mosfet的空穴迁移率特性。对双轴压缩应变装置施加单轴机械应变，测量有效孔迁移率的相对变化。通道Ge含量为0 ~ 100%。通道中存在高达-2.6%的双轴压缩应变，通过机械弯曲施加了-0.06%的附加单轴应变分量。双轴压缩应变sige中孔洞迁移率相对于松弛Si有所提高。当纵向单轴压缩应变< 110 >时，这种迁移率增强进一步增强。双轴压缩应变- sige的迁移率随外加应力的相对变化大于Si，并且随着通道中双轴压缩应变的增加而增加。
The hole mobility characteristics of 〈110〉 /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive strained devices and the relative change in effective hole mobility is measured. The channel Ge content varies from 0 to 100%. Up to -2.6% biaxial compressive strain is present in the channel and an additive uniaxial strain component of -0.06% is applied via mechanical bending. The hole mobility in biaxial compressive strained-SiGe is enhanced relative to relaxed Si. It is observed that this mobility enhancement increases further with the application of 〈110〉 longitudinal uniaxial compressive strain. The relative change in mobility with applied stress is larger for biaxial compressive strained-SiGe than for Si and increases with the amount of biaxial compressive strain present in the channel.