Fabrication and characterization of an InGaAsp/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation
Fabrication and characterization of an InGaAsp/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation
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DOI：
10.1109/jlt.2005.861135
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发表时间：
2006-01-01
影响因子：
4.7
通讯作者：
Nakano, Y
中科院分区：
文献类型：
--
作者：
Shimizu, H;Nakano, Y
基于非互易损耗漂移原理，研制了横向电（TE）模InGaAsP/InP有源波导光隔离器，在1550 nm波长处，TE模隔离比提高到14.7 dB/mm，插入损耗降低。还测量了隔离比和传播损耗的波长依赖性。在1530-1560 nm的整个波长范围内实现了大于10 dB/mm的隔离比。这些结果导致单片集成的半导体波导光隔离器与边缘发射半导体激光器和高功能的光子集成电路与许多级联的光学器件。
The authors have fabricated transverse electric (TE) mode InGaAsP/InP active waveguide optical isolators based on the nonreciprocal loss shift and demonstrated improved TE mode isolation ratio of 14.7 dB/mm with reduced insertion loss at a wavelength of 1550 nm for monolithically integrable optical isolators. The wavelength dependence of the isolation ratio and the propagation loss were also measured. An isolation ratio greater than 10 dB/mm was realized over the entire wavelength range of 1530-1560 nm. These results lead to the monolithic integration of semiconductor waveguide optical isolators with edge-emitting semiconductor lasers and highly functional photonic integrated circuits with many cascaded optical devices.