Fully depleted back-illuminated p-channel CCD development
Fully depleted back-illuminated p-channel CCD development
复制标题
全耗尽背照式 p 通道 CCD 开发
DOI：
10.1117/12.506221
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Guobin Wang
中科院分区：
文献类型：
--
作者：
C. Bebek;J. Bercovitz;D. Groom;S. Holland;R. Kadel;A. Karcher;W. Kolbe;H. Oluseyi;N. Palaio;V. Prasad;B. Turko;Guobin Wang
介绍了劳伦斯伯克利国家实验室CCD开发工作的概况。本文描述了用高电阻硅材料制造的全耗尽背照CCD的运行情况，以及在地面天文台使用这种CCD的结果。描述了辐射损伤和点扩展函数的测量，并讨论了CCD的制作技术。
An overview of CCD development efforts at Lawrence Berkeley National Laboratory is presented. Operation of fully-depleted, back-illuminated CCD's fabricated on high resistivity silicon is described, along with results on the use of such CCD's at ground-based observatories. Radiation damage and point-spread function measurements are described, as well as discussion of CCD fabrication technologies.