Vertical open-bore MRI scanners generate significantly less radiofrequency heating around implanted leads: A study of deep brain stimulation implants in 1.2T OASIS scanners versus 1.5T horizontal systems.
Vertical open-bore MRI scanners generate significantly less radiofrequency heating around implanted leads: A study of deep brain stimulation implants in 1.2T OASIS scanners versus 1.5T horizontal systems.
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垂直开孔MRI扫描仪在植入电极导线周围产生的射频发热显著减少:1.2T OASIS扫描仪与1.5T水平系统中脑深部电刺激植入物的研究。
DOI:
10.1002/mrm.28818
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发表时间:
2021-09
影响因子:
3.3
通讯作者:
Golestanirad L
中科院分区:
文献类型:
--
作者:
Kazemivalipour E;Bhusal B;Vu J;Lin S;Nguyen BT;Kirsch J;Nowac E;Pilitsis J;Rosenow J;Atalar E;Golestanirad L
Patients with active implants such as deep brain stimulation (DBS) devices are often denied access to MRI due to safety concerns associated with the radiofrequency (RF) heating of their electrodes. The majority of studies on RF heating of conductive implants have been performed in horizontal close-bore MRI scanners. Vertical MRI scanners which have a 90° rotated transmit coil generate fundamentally different electric and magnetic field distributions, yet very little is known about RF heating of implants in this class of scanners. We performed numerical simulations as well as phantom experiments to compare RF heating of DBS implants in a 1.2T vertical scanner (OASIS, Hitachi) compared to a 1.5T horizontal scanner (Aera, Siemens). Simulations were performed on 90 lead models created from post-operative CT images of patients with DBS implants. Experiments were performed with wires and commercial DBS devices implanted in an anthropomorphic phantom. We found significant reduction of 0.1 g-averaged specific absorption rate (30-fold, P < 1 × 10−5) and RF heating (9-fold, P < .026) in the 1.2T vertical scanner compared to the 1.5T conventional scanner. Vertical MRI scanners appear to generate lower RF heating around DBS leads, providing potentially heightened safety or the flexibility to use sequences with higher power levels than on conventional systems.
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影响因子:
4.1
作者:
Cui, Zhiqiang;Pan, Longsheng;Ling, Zhipei
通讯作者:
Ling, Zhipei
影响因子:
3.3
作者:
Golestanirad L;Rahsepar AA;Kirsch JE;Suwa K;Collins JC;Angelone LM;Keil B;Passman RS;Bonmassar G;Serano P;Krenz P;DeLap J;Carr JC;Wald LL
通讯作者:
Wald LL
影响因子:
4.4
作者:
Collins, CM;Liu, WZ;Smith, MB
通讯作者:
Smith, MB
影响因子:
5.7
作者:
Golestanirad L;Iacono MI;Keil B;Angelone LM;Bonmassar G;Fox MD;Herrington T;Adalsteinsson E;LaPierre C;Mareyam A;Wald LL
通讯作者:
Wald LL
影响因子:
3.3
作者:
Golestanirad, Laleh;Keil, Boris;Angelone, Leonardo M.;Bonmassar, Giorgio;Mareyam, Azma;Wald, Lawrence L.
通讯作者:
Wald, Lawrence L.