Clean and polymer-free transfer of CVD-grown graphene films on hexagonal boron nitride substrates
Clean and polymer-free transfer of CVD-grown graphene films on hexagonal boron nitride substrates
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DOI：
10.7567/jjap.56.055102
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发表时间：
2017-05-01
影响因子：
1.5
通讯作者：
Miyata, Yasumitsu
中科院分区：
文献类型：
--
作者：
Fujihara, Miho;Ogawa, Shun;Miyata, Yasumitsu
本报告描述了一种溶液辅助、无聚合物转移方法的发展，以及化学气相沉积（CVD）在六方氮化硼上生长石墨烯的表征。拉曼分析表明，无聚合物样品的g模式和2d模式拉曼频率变化很小，并且电荷掺杂对清洁剥离石墨烯的影响最小。电测量表明，电荷掺杂、迟滞和载流子散射在无聚合物样品中被抑制。结果表明，该方法为制备cvd生长的大面积石墨烯和其他二维材料的清洁异质结构提供了一种简单有效的方法。(C) 2017 .日本应用物理学会
This report describes the development of a solution-assisted, polymer-free transfer method and the characterization of chemical vapor deposition (CVD)-grown graphene on hexagonal boron nitride. Raman analysis reveals that polymer-free samples have small variations in G-and 2D-mode Raman frequencies and are minimally affected by charge doping as observed for clean exfoliated graphene. Electrical measurements indicate that charge doping, hysteresis, and carrier scattering are suppressed in polymer-free samples. The results demonstrate that this method provides a simple and effective way to prepare clean heterostructures of CVD-grown, large-area graphene and other two-dimensional materials. (C) 2017 The Japan Society of Applied Physics