Hydroxy-terminated organic semiconductor-based field-effect transistors for phosphonate vapor detection
Hydroxy-terminated organic semiconductor-based field-effect transistors for phosphonate vapor detection
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DOI：
10.1021/ja068964z
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发表时间：
2007-08-01
影响因子：
15
通讯作者：
Katz, Howard E.
中科院分区：
文献类型：
--
作者：
Huang, Jia;Miragliotta, Joseph;Katz, Howard E.
有机场效应晶体管（OFFERS）与羟基官能化的半导体纳入受体层的制造和显示强烈响应的分析物二甲基甲基膦酸酯（DMMP），模拟膦酸酯神经毒剂。暴露于DMMP蒸汽后，观察到大的和可重复的源漏电流变化。与单组分晶体管相比，具有混合羟基化和非羟基化半导体上层的OFFEX具有更高的灵敏度。我们通过比较暴露于不同干扰蒸气时的响应与暴露于DMMP时的响应，进一步研究了异质结构OFFE2的选择性。在DMMP的情况下观察到更高的响应，即使当DMMP蒸气的浓度远低于其他分析物。利用扫描电子显微镜（SEM）和X射线衍射（XRD）对OSC的微观结构进行了表征，结果表明有机混合物具有与单组分OSC薄膜相似的晶体结构和表面形貌，表明混合物的性能增强是由于其化学性质，而不是微观结构效应。
Organic field-effect transistors (OFETs) with a hydroxy-functionalized semiconductor incorporated into a receptor layer were fabricated and shown to respond strongly to the analyte dimethyl methylphosphonate (DMMP) that simulates phosphonate nerve agents. Large and reproducible source-drain current changes were observed upon exposure to DMMP vapor. Compared to single component transistors, OFETs with a mixed hydroxylated and nonhydroxylated semiconductor upper layer exhibited higher sensitivity. We further investigated the selectivity of the heterostructured OFETs by comparing responses upon exposure to different interference vapors with response to DMMP exposure. Much higher response was observed in the case of DMMP, even when the concentration of DMMP vapor was much lower than other analytes. Microstructures of OSC were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), revealing that the organic mixture has similar crystal structure and surface morphology to those of single component OSC films, indicating that the enhanced performance of the mixture is due to its chemical properties, rather than microstructural effects.